Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.78: Poster
Thursday, March 11, 2004, 16:30–19:00, Poster A
Lateral resolution for two-dimensional electron gas fabrication by overgrowth of implantation doped AlxGa1−xAs — •Christof Riedesel, Dirk Reuter, and Andreas D. Wieck — Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universtitätsstr. 150, 44780 Bochum
We use the technique of molecular beam epitaxy (MBE) overgrowth of focused ion beam (FIB) implanted AlxGa1−xAs to fabricate laterally patterned two-dimensional electron gases (2DEGs) [1]. Having established a process that yields pure 2DEGs with high electron mobilities up to 1.5x106 cm2/Vs [2], in this contribution we will present investigations on the lateral resolution of the process.
Although FIB lithography offers the possibility to introduce the dopants laterally resolved into the heterostructure, so far no successful fabrication of sub-micron patterned 2DEGs has been reported for this approach. Our experiments have shown that the resolution of the process is not solely determined by the beam diameter of the ion beam but is strongly affected by the thermal treatment used to cure implantation damage and activate the ions electrically. By optimizing the annealing conditions we have achieved a lateral resolution of less than 500 nm.
Financial support of the German Federal Ministry of Education and Research via grant No. 01BM908/6 is gratefully acknowledged.
[1] H. Arimoto, A. Kawano, H. Kitada, A. Endoh, and T. Fujii, J. Vac. Sci. Technol. B 9 (1991) 2679.
[2] D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A.D. Wieck, Appl. Phys. Lett. 82 (2003) 481.