Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 44: Poster II

HL 44.86: Poster

Thursday, March 11, 2004, 16:30–19:00, Poster A

Growth of GaN on Si(111) by Molecular Beam Epitaxy — •Ralph Meijers, Raffaella Calarco, and Hans Lüth — Institut für Schichten und Grenzflächen (ISG-1) and cni - Center of Nanoelectronic Systems for Information Technology , Forschungszentrum Jülich, 52425 Jülich, Germany

The growth of GaN on Si(111) substrate was performed by molecular beam epitaxy (MBE) with an RF-plasma source. Different III-N flux ratios and substrate temperatures were chosen as optimization parameters. The layers were characterized with atomic force microscopy (AFM), X-ray diffraction (XRD) and Rutherford backscattering measurements (RBS). Significant improvement of the GaN properties was reached using an AlN seed layer. First, few aluminium monolayers were deposited on the Si substrate (T_sub=770^∘C), then nitrogen exposure followed to form AlN, thus preventing amorphous silicon nitride formation on the clean Si substrate. With the aim to provide a better lattice match for the subsequent growth of GaN, an AlGaN interlayer with different thicknesses and alloy composition was grown on top of the AlN nucleation layer. The GaN on top was grown under different growth conditions. In conclusion the AlN/AlGaN buffer layer improves the GaN growth on Si(111).