Regensburg 2004 – scientific programme

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HL: Halbleiterphysik

HL 44: Poster II

HL 44.87: Poster

Thursday, March 11, 2004, 16:30–19:00, Poster A

TEM investigation on selforganized superlattice formation in AlGaN on Si(111) — •Karl Engl, Andreas Able, Josef Zweck, and Werner Wegscheider — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

AlGaN/GaN heterostructures were grown on Si(111) substrates by metal organic vapour phase epitaxy (MOVPE) to investigate the selforganized superlattice formation in AlGaN. The samples were characterized using high resolution transmission electron microscopy (HRTEM), high resolution x-ray diffraction (HRXRD) and photoluminescence measurements. We observe a formation of selforganized superlattices with periods around 3.1nm. We present results on the influence of different growth parameters on the selforganization in AlGaN layers and suggest a model for the mechanism of selforganized superlattice formation.