Regensburg 2004 – scientific programme
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.9: Poster
Thursday, March 11, 2004, 16:30–19:00, Poster A
Mn Doped ZnO: A Diluted Magnetic Semiconductor? — •Karl-Wilhelm Nielsen1, Stefanie Wagner1, Daniel Reisinger1, Jan Boris Philipp1, Petra Majewski1, Lambert Alff1, Jürgen Simon2, and Rudolf Gross1 — 1Walther-Meißner-Institut, Walther-Meißner-Str. 8, 85748 Garching — 2Institut für Anorganische Chemie, Universität Bonn, Römerstraße 164, 53117 Bonn
Over the last years the interest in spintronics has grown continuously. The use of magnetic semiconductors is of particular interest since it would allow for all semiconductor spintronic devices. In diluted magnetic semiconductors the semiconductor ions are partly replaced by transition metal ions. It is expected that the localized moments of the transition metal ions are coupled ferromagnetically via the mobile charge carriers of the semiconductor. It is predicted that Mn doped ZnO is a promising candidate for spintronics with a Curie temperature above room-temperature.
We have grown thin Mn doped ZnO films using Pulsed Laser Deposition (PLD) at different temperatures and gas atmospheres. Transmission Electron Microscopy shows a large amount of growth defects which might lead to an enrichment of Mn ions at these defects. The magnetization shows ferromagnetic behavior at low temperatures for Mn doped films grown at 200∘C without further carrier doping. Films grown at higher temperatures do not show a ferromagnetic hysteresis. Also, carrier doping by supplying a high flux of N atoms during growth does not lead to ferromagnetism in the system.