Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Heterostrukturen I
HL 9.1: Vortrag
Montag, 8. März 2004, 15:15–15:30, H17
Sputter depth profiling of GaN/InAlGaN multi quantum well structures — •Gernot Ecke1, Rastislav Kosiba1, Gabriel Kittler1, Nikos Pelekanos2, and Oliver Ambacher1 — 1Center of Micro- and Nanotechnologies, TU Ilmenau, D-98693 Ilmenau, Germany — 2Foundation for Research and Technology - Hellas, P.O. Box 1527, GR 71110 Heraklion, Crete, Greece
Multi quantum well (MQW) structures play a crucial role in the design of many optoelectronic devices. The regularity of these structures, the composition of the layers, and the quality of the interfaces between the layers are very important for the device functionality. In this contribution, the sputter depth profiles across the MQW consisting of seven GaN/InAlGaN layer pairs with thickness of 7 nm will be presented. The sputter depth profiling was carried out by Auger electron spectroscopy in conjunction with argon ion sputtering. Grazing incidence and low ion energy provided good sputtering conditions for highly depth resolved measurements. For the evaluation of the depth profiles the factor analysis of the nitrogen KLL and overlapping Al LMM and Ga MNN Auger transitions was applied. The deterioration of the true depth profile due to the sputtering itself as well as due to the information depth of the Auger electrons was followed by the dynamic Monte Carlo simulation code TRIDYN. From the good agreement between the measurement and the simulation the regularity of the measured MQW structure as well as good interface quality could be proven.