Regensburg 2004 – wissenschaftliches Programm
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MA: Magnetismus
MA 13: Poster:Schichten(1-23),Spinabh.Trsp(24-41),Exch.Bias(42-56),Spindyn.(57-67),Mikromag.(68-76),Partikel(77-90),Spinelektr.(91-97),Elektr.Theo.(98-99),Mikromag+PhasÜ+Aniso.(100-105),Magn.Mat.(106-118),Messmethod.(119-121),Obflm.+Abbverf.(122-123)
MA 13.35: Poster
Dienstag, 9. März 2004, 15:00–19:00, Bereich A
Epitaxial tunnel junctions based on highly spin-polarized Fe(110) electrodes — growth, fabrication, and transport properties — •J.O. Hauch1, M. Fraune1, H. Kittur1, P. Turban1, U. Rüdiger2, and G. Güntherodt1 — 1II. Physikalisches Institut, RWTH Aachen, 52056 Aachen — 2Fachbereich für Physik, Universität Konstanz, 78457 Konstanz
Recently theoretical and experimental efforts have been spent on the study
of epitaxial magnetic tunnel junctions (MTJs). Such model systems are
essential for the fundamental understanding of the spin-dependent tunneling
mechanism. We present the epitaxial growth, the fabrication process, and
the transport properties of epitaxial Fe(110)/MgO(111)/Fe(110) MTJs. The
highly spin-polarized Fe(110) electrodes [1] separated by an MgO(111)
barrier of 4 nm thickness are grown on an Al2O3(1120)
substrate by using a Mo(110) seed layer. Tunnel junctions are prepared from
these thin film samples using optical and electron beam lithography
combined with ion beam etching. The application of the Rowell criteria as
well as the Poole-Frenkel analysis [2] to the temperature dependent
conductivity confirm an MgO barrier of a high quality. TMR measurements
show actually an MR of approximately 13 % at T = 16 K.
This work was supported by the BMBF, contract no. 13N7329.
[1] Yu. S. Dedkov, U. Rüdiger and G. Güntherodt, Phys. Rev. B 65, 064417 (2002).
[2] P. Rottländer et al., Phys. Rev B 65, 054422 (2002).