Regensburg 2004 – wissenschaftliches Programm

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MA: Magnetismus

MA 13: Poster:Schichten(1-23),Spinabh.Trsp(24-41),Exch.Bias(42-56),Spindyn.(57-67),Mikromag.(68-76),Partikel(77-90),Spinelektr.(91-97),Elektr.Theo.(98-99),Mikromag+PhasÜ+Aniso.(100-105),Magn.Mat.(106-118),Messmethod.(119-121),Obflm.+Abbverf.(122-123)

MA 13.41: Poster

Dienstag, 9. März 2004, 15:00–19:00, Bereich A

Characterization of Fe/GaAs Schottky barriers — •A. Spitzer, P. Kotissek, M. Bailleul, and G. Bayreuther — Institut für Experimentelle und Angewandte Physik, Universität Regensburg

Recent results [1] show that Schottky barriers, which are formed at metal/semiconductor-contacts under certain conditions, are promising candidates for efficient injection of spinpolarized electrons into semiconductors. The subject of this work are epitaxial Fe films on GaAs. The properties of the Schottky-barriers are investigated with respect to the doping-density, preparation conditions of the substrat and its crystal orientation. The GaAs surfaces are prepared in a UHV system by annealing and ion sputtering and subsequently coated with Fe by molecular beam epitaxy. To characterize the barriers temperature dependent (10K to 300K) current-voltage-curves and room temperature capacitance-voltage-curves are measured. From the data we are able to determine the different transport-regimes - thermionic emission and tunneling. The effect of the termination and the doping level of the GaAs surface on the characteristic parameters of the Schottky barriers is investigated.

Support by Deutsche Forschungsgemeinschaft is gratefully acknowledged.

[1] A.T. Hanbicki et al, Appl. Phys. Lett., 80, 1240 (2002)