Regensburg 2004 – scientific programme

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MA: Magnetismus

MA 13: Poster:Schichten(1-23),Spinabh.Trsp(24-41),Exch.Bias(42-56),Spindyn.(57-67),Mikromag.(68-76),Partikel(77-90),Spinelektr.(91-97),Elektr.Theo.(98-99),Mikromag+PhasÜ+Aniso.(100-105),Magn.Mat.(106-118),Messmethod.(119-121),Obflm.+Abbverf.(122-123)

MA 13.5: Poster

Tuesday, March 9, 2004, 15:00–19:00, Bereich A

Room temperature TMR-effect in magnetite based magnetic tunnel junctions — •D. Reisinger, P. Majewski, M. Schonecke, J. Schuler, M. Opel, A. Erb, L. Alff, and R. Gross — Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching

Magnetite (Fe₃O₄) is an interesting candidate for new spintronic devices. It has been predicted to be a half-metal at room temperature [1]. We prepared magnetite epitaxial thin films by pulsed laser deposition (PLD) [2,3]. These films have been combined with a tunneling barrier and a Ni top electrode. Five different materials have been tested for the tunneling barrier. From this trilayers magnetic tunnel junctions with area ranging between 10× 10 µm² to 20× 40 µm² have been fabricated using optical lithography and ion beam etching. The magnetic properties, in particular the coupling within the trilayers have been investigated using a SQUID magnetometer. The magnetotransport behavior of the tunnel junctions has been measured as a function of temperature and applied magnetic field. The junctions showed reproducible a tunneling magnetoresistance (TMR) effect at room temperature with almost ideal switch behavior.
Z. Zhang, and S. Satpathy, Phys. Rev. B, 44, 13319 (1991).
D. Reisinger, B. Blass, J. Klein, J. B. Philipp, M. Schonecke, A. Erb, L. Alff, and R. Gross, Appl. Phys. A, 77, 619 (2003).
D. Reisinger, M. Schonecke, T. Brenninger, M. Opel, A. Erb, L. Alff, and R. Gross, Jour. Appl. Phys., 94, 1857 (2003).