Regensburg 2004 – scientific programme
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MA: Magnetismus
MA 26: Mikro- und nanostrukturierte Materialien
MA 26.4: Talk
Thursday, March 11, 2004, 16:00–16:15, H10
Deep-submicron magnetic tunnel junctions patterned with hydrogen silsesquioxane — •M. Krämer1, R. Adam1, A. van der Hart1, H. Kohlstedt2, M. Weides2, H. Dassow2, and J. Schelten1 — 1Institut für Schichten und Grenzflächen, Forschungszentrum Jülich GmbH, D-52425 Jülich — 2Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich
Nanostructuring of magnetic thin films is a necessary step in the investigation of physical phenomena like single domain behaviour or superparamagnetism, as well as, in the development of ultrasmall magnetic tunnel junctions (MTJs) for high density magnetic memories. The aim of our work is to fabricate magnetic tunnel junctions with lateral dimensions far below one micrometer. To reach this goal a negative tone resist based technique for the fabrication of deep-submicron magnetic tunnel junctions using hydrogen silsesquioxane (HSQ) has been devised. HSQ is an inorganic three dimensional polymer exhibiting SiO2-like properties after annealing and was reported to behave as a negative e-beam resist with a resolution better than 50 nm. This was used to pattern magnetic trilayers into lines with a minimum width smaller than 60 nm connected to external bonding pads. MTJs were then formed by placing a second line across the first after edge isolation. Magnetoresistance measurements performed on MTJs smaller than 100 nm are presented.