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MA: Magnetismus

MA 3: Anisotropie / Magnetoelastizit
ät

MA 3.2: Vortrag

Montag, 8. März 2004, 12:15–12:30, H10

Magnetic anisotropies in MBE-grown MnAs — •M. Bowen, L. Däweritz, K.J. Friedland, and K.H. Ploog — Paul Drude Institute for Solid-State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin

The challenge of integrating spin electronics with semiconductor technologies has spurred much research into understanding the physics of magnetic semiconductors. In particular, control of the magnetization reversal process is essential to harnessing the carrier spin in such heterostructures. As a model system exhibiting room temperature ferromagnetism, MnAs has been extensively studied but the magnetic anisotropies at play are still poorly understood. Using the Hall effect as a sensitive probe of in-plane and out-of plane magnetic anisotropies, we have investigated MnAs(001)//GaAs(001) and MnAs(311)//GaAs(001) systems to isolate the role of the c-axis uniaxial magnetic anisotropy relative to other contributions.