Regensburg 2004 – scientific programme

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MA: Magnetismus

MA 30: Magnetische dünne Schichten III

MA 30.2: Talk

Friday, March 12, 2004, 11:00–11:15, H10

Magnetism of thin Fe films on GaAs — •Michal Kosuth, Voicu Popescu, and Hubert Ebert — Department Chemie / Physikalische Chemie, Universität München, Butenandstr. 5-13, D-81377 München, Germany

The electronic and magnetic properties of thin Fe layers on GaAs have been studied using the fully-relativistic TB-KKR band structure method. The most important features observed in the magnetisation profiles are that no magnetically dead layers occur and there is an appreciable induced magnetisation in the semiconductor subsystem. An increase of the orbital moment in the Fe layers both at the surface as well as at the Fe/semiconductor interface has been observed. Calculations of the magnetocrystalline anisotropy energy for thin layers of Fe on a semiconductor substrate confirm the preferable in-plane magnetisation with a noticeable uniaxial character in accordance with experiments. To go beyond the ideal Fe/GaAs interface, relaxation of the interface layer has also been accounted for. Its quantitative and qualitative effects to the magnetic properties will be presented and discussed.