Regensburg 2004 – wissenschaftliches Programm
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MA: Magnetismus
MA 31: Spinelektronik
MA 31.8: Vortrag
Freitag, 12. März 2004, 12:30–12:45, H22
Nanosecond Pulse Characterization of Magnetic Tunnel Junctions — •Roman Adam1, Jakob Schelten1, Michael Siegel2, and Hermann Kohlstedt3 — 1Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany — 2Institute of Solid State Research, Research Center Jülich, D-52425 Jülich, Germany — 3Institut für Elektrotechnische Grundlagen der Informatik, Universtät Karlsruhe D-76187 Karlsruhe, Germany
We fabricated and tested Co/Al2O3/Co magnetic tunnel junctions (MTJ) embedded in coplanar strip (CPS) transmission lines designed for high-frequency device measurements. MTJs were defined by photolithography and by Ar ion-beam etching resulting in device area ranging from 2 × 6 µ m2 to 3 × 18 µ m2. After MTJ and CPS fabrication, selected chip area was covered with SiO2 thin film for isolation. Control lines passing in 400 nm distance above MTJs were finally defined by lift-off. Our MTJs show a magnetoresistance effect up to 17.5 % at room temperature. To characterize device high-frequency response, MTJs were excited by 5- to 50-ns-long electrical pulses applied to the control line. Device response due to the MTJ top electrode magnetization reversal was observed experimentally and compared with simulations.