Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 14: Postersitzung (Adsorption an Oberflächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Phasenübergänge, Rastersondentechniken, Struktur und Dynamik reiner Oberflächen)
O 14.41: Poster
Monday, March 8, 2004, 18:00–21:00, Bereich C
GIXRD-measurements and -simulation of CaF2 on Si(111) — •Andreas Gerdes1, Carsten Deiter1, Eddy Patrick Rugeramigabo1, and Joachim Wollschläger2 — 1Institut für Festkörperphysik, Universität Hannover, Appelstr. 2 — 2Institut für physikalische Chemie und Festkörperphysik, Universität Bremen, im Nord-Westen-Bremens NW2
Due to the small lattice mismatch at room temperature CaF2 is a good candidate to study growth processes on Si(111). Further the system semiconductor/insulator promises interesting features for electronic devices on the nanoscale. We grew CaF2 films of different thickness at T = 500 ∘C - 600 ∘C and investigated them by means of GIXRD. Intensity oscillations due to the finite CaF2 films thickness show that the films are very homogeneous.