Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 14: Postersitzung (Adsorption an Oberflächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Phasenübergänge, Rastersondentechniken, Struktur und Dynamik reiner Oberflächen)

O 14.63: Poster

Montag, 8. März 2004, 18:00–21:00, Bereich C

Inital growth of PTCDA on Cu(100) investigated by STM — •Thorsten Wagner, Christian Bobisch, Amin Bannani, Hatice Karacuban und Rolf Möller — Universtität Duisburg-Essen, Institut für Experimentelle Physik, Universitätsstr. 3-5, 45141 Essen

The organic semiconductor 3,4,9,10-perylene-tetracarboxylic-dianhydrid (PTCDA) has been subject of many investigations. In this work we will discuss the initial growth of PTCDA on a Cu(100) single crystal surface. The investigations have been carried out with a self build STM under UHV conditions. The films with a thickness of about one monolayer have been grown by means of thermal evaporation from a heated crucible. A structure comparable to the square phase also found by Chizhov et al. on Au(111. The growth of PTCDA on Cu(100) will be compared to results on other copper surfaces.

[1] I. Chizhov et al., Journal of Crystal Growth 208 (2000) 449-458