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O: Oberflächenphysik

O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)

O 28.1: Poster

Mittwoch, 10. März 2004, 16:00–19:00, Bereich C

Bulk and surface sensitive photoemission on 1T-TiS₂ — •M. Garbrecht, O. Seifarth, M. Skibowski, and L. Kipp — Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098 Kiel, Germany

The bulk and surface sensitive electronic structure of the layered transition metal dichalcogenide 1T-TiS₂ is investigated by means of angle resolved photoemission spectroscopy with VUV and XUV photons. At photon energies around 50 eV where ARPES is extremely surface sensitive we observe a semiconducting band structure. This is contrasted by more bulk sensitive photoemission data obtained at 150 eV where a semimetallic behavior is found. The results are discussed in the context of recent band structure calculations performed within the density functional theory. The experiments have been performed with the ASPHERE spectrometer at the HASYLAB beamlines W3.2 and BW3. Work supported by the BMBF project no. 05 KS1 FKB and DFG Forschergruppe FOR 353