Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)

O 28.23: Poster

Mittwoch, 10. März 2004, 16:00–19:00, Bereich C

Ultrathin layers of Ag deposited on 4H-SiC(0001) — •Serguei Soubatch and Ulrich Starke — Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart

Despite the significance of SiC for high-temperature and high-power electronic devices based on metal/semiconductor interfaces, the initial stages of metal layer formation on SiC surfaces still remain insufficiently explored in comparison to well known metal/silicon heterointerfaces, such as Ag on Si. We investigated the deposition of Ag on 4H-SiC(0001) using quantitative low-energy electron diffraction (LEED). Ag layers of 0.2, 0.5 and 1 ML coverage were deposited on the clean (3×3) and (√3×√3)R30^∘ SiC(0001) surface phases. The structural development after room temperature deposition as well as after annealing was studied. The (3×3) phase is only marginally influenced by Ag deposition at room temperature. Annealing leads to Ag diffusion and subsequent desorption without a significant phase transformation. In case of the (√3×√3)R30^∘ phase considerable changes can be monitored in the LEED intensities spectra immediately after deposition. Here, structural changes are found during annealing also, possibly caused by Ag diffusion. In both cases the original surface phases reappear after Ag desorption.