Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)

O 28.25: Poster

Mittwoch, 10. März 2004, 16:00–19:00, Bereich C

Direct evidence from FTIR for hydrogen incorporation into the MOCVD-grown P-rich reconstructed InP(100) surface — •Tobias Letzig, H.J. Schimper, Thomas Hannappel, and Frank Willig — Hahn-Meitner-Institute, Glienicker Str. 100, 14109 Berlin, Germany

Recently, the groups of Schmidt and Bechstedt have discussed several different surface reconstructions for InP(100). Three of those have been assigned to actually prepared surface reconstructions. In the case of MOCVD growth the P-rich (2x1/2x2) surface is postulated to contain hydrogen bonds that stabilize buckled P-P dimers. A P-rich surface with a different reconstruction is formed via MBE growth in the absence of hydrogen. The In-rich (2x4) reconstruction also does not contain any hydrogen atoms. We present here experimental support for the postulated hydrogen bonds on the surface of MOCVD grown P-rich (2x1/2x2) reconstructed InP(100) in the form of FTIR spectra that were measured in UHV. We made use of a patented contamination free transfer of the sample from the MOCVD reactor into a mobile UHV chamber. FTIR spectra will be presented for the as-grown surface and for the surface after further exposure to hydrogen and deuterium.