Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)

O 28.26: Poster

Mittwoch, 10. März 2004, 16:00–19:00, Bereich C

RMS-roughness of Si from nm to mesoscopic scale — •Stefan Schröder, Herbert Pfnür, and Martin Henzler — Institut für Festkörperphysik, Appelstr.2 D-30167 Hannover,Germany

The International Technology Roadmap for Semiconductors (ITRS) defines a decrease in surface roughness and an increase of the site planarity on a nm scale as two of the requirements for starting materials for industrial fabrication of next generations of silicon based micro- and nanodevices. The rms-roughness on different length scales is the principal property examined to verify the accomplishment of the goals set. We calculate Power Spectral Densities to examine the decay of rms-roughness on the length scales open to STM-measurements (nm to µ m) and light scattering methods (µ m to mm) on standard wafers after annealing in a hydrogen environment. The light scattering method allows the detection and counting of numbers of particles per area, as demanded by the ITRS, to make sure that improved flatness is not accompanied by an increase in defect-density. In further experiments profiles of etched steps are monitored to determine diffusion behaviour. We gratefully acknowledge financial support by Wacker Siltronic GmbH.