Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)
O 28.3: Poster
Wednesday, March 10, 2004, 16:00–19:00, Bereich C
Geometric and electronic structure of epitaxial PbS on HfS2 — •J. Iwicki, A. Kamenz, O. Seifarth, S. Habouti, M. Kalläne, and L. Kipp — Institut für Experimentelle und Angewandte Physik, Universität Kiel, D-24098 Kiel, Germany
Misfit layer compounds like (PbS)NbS2 form a
special
class of layered heterostructures. Due to 4-fold symmetries of the PbS
layers which contrast the 6-fold symmetry of the NbS2 layers a misfit is
constituted. Up to now, bulk crystals of misfit compounds could only be
grown
with metallic hexagonal layers like e.g. NbS2 or TiS2. Here we show
first steps of epitaxial growth of PbS on semiconducting HfS2 with
corresponding STM images and angle resolved photoemission spectra for
different coverages of PbS on HfS2. The photoemission results are
compared
with data of clean HfS2 and PbS bulk crystals. The experiments have been
performed with the ASPHERE spectrometer at HASYLAB.
Work supported by the BMBF proj. 05 KS1 FKB and DFG
Forschergruppe
FOR 353