Regensburg 2004 – scientific programme
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O: Oberflächenphysik
O 28: Postersitzung (Elektronische Struktur, Grenzfläche fest-flüssig, Halbleiteroberflächen und -grenzflächen, Magnetismus und Symposium SYXM, Methodisches, Nanostrukturen, Oberflächenreaktionen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie)
O 28.55: Poster
Wednesday, March 10, 2004, 16:00–19:00, Bereich C
Optical anisotropy of Cs nanostructure formation on GaAs(110), InP(110) and InAs(110) — •Karsten Fleischer1,2, Gianlorenzo Bussetti2, Claudio Goletti2, Pierro Chiaradia2, and Wolfgang Richter1,2 — 1TU-Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Universitá “Tor Vergata”, Dipartimento di Fisica, Via Ricerca Scientifica 1, 00133 Roma, Italy
We present reflectance anisotropy spectra (RAS) of Cs covered GaAs, InP and InAs cleaved (110) surfaces. In such systems Cs forms one dimensional wirelike structures at low coverages. For the first time we studied the formation of these wires in situ with optical and therefore nondestructive techniques. Wire formation is accompanied with characteristic minima in the RAS spectra between the E0 + Δ0 and E1 bulk critical point. With growing coverages (θ > 0.3 ML) and formation of the two dimensional closed Cs layer (θ ≈ 0.5 ML), changes in the Cs related minima occur. Different wire types and also the transition into the disordered Cs double layers at saturation coverage ( θ ≈ 1 ML) can be monitored optically.