Regensburg 2004 – wissenschaftliches Programm
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O: Oberflächenphysik
O 39: Epitaxie und Wachstum III
O 39.2: Vortrag
Donnerstag, 11. März 2004, 16:00–16:15, H39
Spectroscopic signature of stacking faults and dislocation lines on Co(0001) — •Jens Wiebe1, Lilli Sacharow1, André Wachowiak1,2, Markus Morgenstern1, and Roland Wiesendanger1 — 1Institute of Applied Physics, Hamburg University, Jungiusstr. 11, D-20355 Hamburg, Germany — 2University of California at Berkeley, Department of Physics, 366 Le Conte Hall #7300, Berkeley, CA 94720-7300, USA
Growth morphology and electronic structure of Co films grown on W(110) were studied using scanning tunneling microscopy and spectroscopy (STS) at T=6 K. Depending on growth conditions continuous films or islands are found. Within the continuous films dislocation lines partly appear while in both islands and continuous films stacking fault areas could be identified. STS revealed that the d-like surface-related state of minority-spin character at 0.3 eV below the Fermi energy is extremely sensitive to stacking faults at the surface as well as to dislocation lines located several layers below the surface. The exact character of the state was determined by comparison to first principle electronic structure calculations.