Regensburg 2004 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

O: Oberflächenphysik

O 40: Halbleiteroberflächen und -grenzflächen

O 40.3: Talk

Thursday, March 11, 2004, 16:15–16:30, H45

Initial and advanced stages of Si dissolution in alkaline media using photoelectron spectroscopy — •Katarzyna Skorupska¹, Mohammed Aggour¹, Eder Goncalves¹, Ralf Hunger², Helmut Jungblut¹, Michael Kanis¹, Michael Lublow¹, Elmar Rüther¹, Thomas Wilhelm¹, and Hans-Joachim Lewerenz¹ — ¹Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin — ²TU Darmstadt, Petersenstr. 23, D-64287 Darmstadt

Silicon dissolution in aqueous alkaline media is of ubiquitous importance in micro- and nanostructuring. Never the less detailed surface analytical investigations on the dissolution steps are lacking. The presented study applies synchrotron radiation spectroscopy using a specifically designed in-system electrochemistry vessel attached to the SoLiAS apparatus at the U49/2 beamline at Bessy II. Initial and advanced oxide layers are analysed in electrode potential-, current- and charge-controlled experiments. Besides chemical surface changes also surface electronic effects were monitored using ultraviolet photoelectron spectroscopy. The results are compared with several recently proposed dissolution mechanisms.