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SYLS: Life Sciences on the Nanometer Scale - Physics Meets Biology

SYLS 3: Symposium "Life Sciences on the Nanometer Scale - Physics Meets Biology"

SYLS 3.30: Poster

Mittwoch, 10. März 2004, 16:00–18:30, B

SILICON-ON-INSULATOR NANOWIRE TRANSISTORS FOR BIOSENSOR APPLICATIONS — •Pagra Truman¹, Karin Buchholz¹, Andreas Kress¹, Dominik Scheible², Marc Tornow¹, and Gerhard Abstreiter¹ — ¹Walter Schottky Institut, TU Muenchen, 85748 Garching, Germany — ²Center for Nanoscience and Sektion Physik, LMU, 80539 Muenchen

Planar semiconductor field effect devices have potential for applications in biosensing such as the label-free detection of DNA or proteins due to their high sensitivity to surface potential changes. Lateral patterning into nanowire-like structures largely increases the surface-to-volume ratio and opens up applications with high spatial resolution.

We present electrical transport measurements on sub-micron transistor structures based on Silicon-on-Insulator (SOI) technology in aqueous solutions. Silicon wires with lateral dimensions of few 100 nm were laterally patterned out of the 30 nm thick top Silicon layer by high resolution electron beam lithography and reactive ion etching. After encapsulation into a fluidic chamber setup the transistor device is operated in an inverted MOSFET mode with an in-plane-gate controlled sensitivity.

Device characterization in aqueous electrolytes of different ionic strength and pH will be presented. We discuss perspectives for the detection of biomolecular interactions at the functionalized Si surface.