Regensburg 2004 – scientific programme

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 4: Hybrid Systems and Devices

SYOH 4.2: Talk

Thursday, March 11, 2004, 17:00–17:15, H37

Submicron Polymer Field-Effect Transistors — •Susanne Scheinert¹, Axel Scherer², Theodor Doll¹, Gernot Paasch³, and Ingo Hörselmann¹ — ¹TU Ilmenau — ²CALTECH, Pasadena, USA — ³IFW Dresden

Application-relevant speed of polymerelectronics requires transistors with submicrometer channel length. At present appropriate low-cost patterning does not exist. We prepared such transistors using a non-lithographic technique for the definition of the channel length in the submicron range. To avoid short-channel effects a hybrid design with silicon dioxide as gate insulator is used. As active layer different poly(3-alkythiophene) (P3AT) has been used. The transistors feature (i) controlled defined channel length between 0.75µ m and 1µ m, (ii) an operation at voltages lower than 5V, (iii) well pronounced saturation of the output characteristics with (iv) only marginal short channel effects, (v) a high on-off ratio (>10⁴), (vi) rather small inverse subthreshold slope S≈ 0.5V/dec, and (vii) negligible contact resistances. Since the used P3AT were not especially treated, the mobility is still low (≈ 2...3cm²/Vs). The hysteresis is negligible for the drain voltage sweep for a given gate voltage, but as usual there is a hysteresis for the gate voltage sweep at given drain voltage. However, the corresponding threshold voltage shift is with ≈ 1V relatively small.