Regensburg 2004 – scientific programme
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.11: Poster
Thursday, March 11, 2004, 18:00–21:00, B
Temperature-Dependent Growth of Porphyrin and Phthalocyanine Thin Films on Modified Silicon Surfaces — •Christian Kelting1, Ossamah Abdallah2, Marinus Kunst2, Natalia Bazyakina3, Dieter Wöhrle3, and Derck Schlettwein1 — 1Physical Chemistry 1, University of Oldenburg, Germany — 2Hahn- Meitner- Institute, Berlin, Germany — 3Institute of Organic and Macromolecular Chemistry, University of Bremen, Germany
Films of phthalocyaninatozinc (PcZn) and Tetraphenylporphyrinatozinc (TPPZn) were evaporated on thin films of microcrystalline Si and on hydrogen-terminated Si-wafers (111) as a model surface for microcrystalline Si under conditions of its preparation. The goal is to embed molecular sensitizers into microcrystalline Si as a new concept for thin film solar cells. The maximum substrate temperature for a successful deposition of PcZn and TPPZn was determined to 523 K for PcZn and 423 K for TPPZn on H-Si (111). UV-Vis differential reflection spectroscopy was measured in situ. At 300 K, a 50 nm PcZn film survived for 5h, but slowly evaporated during this time. The morphology of the deposited films was investigated by atomic force microscopy. Larger particles with well- defined shape indicating crystallinity of the films were detected at these higher substrate temperatures. Changes in the crystal structure of PcZn were also observed on the silicon substrates. The alpha- modification of PcZn was found in depositions at 298 K whereas the beta- modification was formed at 523 K.