Regensburg 2004 – scientific programme
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.18: Poster
Thursday, March 11, 2004, 18:00–21:00, B
Structure and growth morphology of CuPc thin films — •S. Kowarik1, A. Gerlach1, N. Kishimoto1,2, R. Jacobs1, and F. Schreiber1 — 1Physical and Theoretical Chemistry Laboratory, Oxford University, South Parks Road, Oxford OX1 3QZ, UK — 2Department of Chemistry, Tohoku University, Aoba-ku, Sendai 980-8578, JAPAN
We present a study of the growth and structure of thin films of the organic semiconductor copper-phthalocyanine (CuPc) on SiO2. Films up to a thickness of 2000 Å have been studied as a function of the growth parameters (temperature and growth rate) by x-ray diffraction, spectroscopic ellipsometry and atomic force microscopy. The films exhibit a change in morphology from smooth films to needle-shaped crystallites depending on growth temperature. This transition is associated with a change from low crystallinity in smooth films to high crystallinity in rough films. Measurements of the geometric film parameters (thickness and roughness) with spectroscopic ellipsometry and x-ray diffraction allow for a comparison of the two techniques. The results are compared to measurements on thin films of the fluorinated version F16CuPc (1, 2).
1. J. O. Osso et al., Advanced Functional Materials 12, 455-460 (2002).
2. M. I. Alonso et al., Journal of Chemical Physics 119, 6335-6340 (2003).