Regensburg 2004 – wissenschaftliches Programm

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.19: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

Structural and Morphological Properties of N,N-DiMethyl-3,4,9,10-PeryleneTetraCarboxylic DiImide Films on Passivated GaAs(100) Substrates — •G. Salvan, S. Silaghi, G. Baumann, T.U. Kampen, R. Scholz, and D.R.T. Zahn — Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany

Amongst the many-fold applications of organic thin films the use as active interlayers in metal/inorganic semiconductor junctions for the high-frequency and microwave technology is very promising. A route to achieve better device performance is to control the morphology of the organic film by changing the substrate temperature for the film growth. Raman spectroscopy was employed to investigate in situ the structural properties and the morphology of N,N-DiMethyl-3,4,9,10-PeryleneTetraCarboxylic DiImide films deposited onto S-passivated GaAs(100) substrates in ultra-high vacuum at various temperatures. Complementary scanning electron microscopy studies revealed that all the films consist of islands. The crystalline nature of these islands was proven by the observation of libronic phonon-like modes of the molecular crystal in the Raman spectra. The decrease in the phonon band widths observed at elevated substrate temperatures is related to an increase in the size of the crystalline domains and improvement of crystallinity.