Regensburg 2004 – wissenschaftliches Programm
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.26: Poster
Donnerstag, 11. März 2004, 18:00–21:00, B
VUV-Spectroscopic Ellipsometry Investigations of DNA Base Layers Deposited onto H-Si(111) Surfaces — •S. D. Silaghi1, Yu J. Suzuki1, O. D. Gordan1, C. Himcinschi1, G. Salvan1, M. Friedrich1, T. U. Kampen1, D. R. T. Zahn1, C. Cobet2, N. Esser2, W. Richter2, and W. Braun3 — 1Institut für Physik, TU Chemnitz, 09107 Chemnitz, Germany — 2Institut für Festkörperphysik, TU Berlin, 10623 Berlin, Germany — 3BESSY GmbH, 12489 Berlin-Adlerhof, Germany
DNA bases (adenine, guanine, thymine, cytosine) have electronic properties comparable to wide-gap semiconductors thus being promising candidates for hybrid organic/silicon electronics. Vacuum Ultraviolet Spectroscopic Ellipsometry (VUV-SE) was applied for the in situ optical characterization of DNA base layers grown by organic molecular beam deposition onto H-Si(111) under ultra-high vacuum conditions. VUV-SE measurements were performed with a rotating analyzer-type ellipsometer using synchrotron radiation as a light source. The spectra were recorded at an incidence angle of about 68o in the energy range from 2.5 to 10 eV. Additionally the samples were investigated ex situ using a variable angle spectroscopic ellipsometer in the energy range from 0.8 to 5 eV. The dielectric functions of the DNA base layers were determined in the whole energy range.