Regensburg 2004 – wissenschaftliches Programm
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SYOH: Organic and Hybrid Systems for Future Electronics
SYOH 5: Poster
SYOH 5.27: Poster
Donnerstag, 11. März 2004, 18:00–21:00, B
Spectroscopic ellipsometric characterization of organic films deposited via Organic Vapor Phase Deposition — •C. Himcinschi1, N. Meyer2, S. Hartmann3, M. Friedrich1, G. Strauch2, W. Kowalsky3, M. Heuken2, and D.R.T. Zahn1 — 1Halbleiterphysik, Technische Universität Chemnitz, Reichenhainerstr. 70, D-09107 Chemnitz, Germany — 2AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany — 3Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstr. 22, D-38106 Braunschweig, Germany
Thin films of Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) and N,N′-[Di-(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl )-4,4′-diamine (α-NPD) were deposited onto 8No-dq Si substrate by Organic Vapor Phase Deposition. The thickness analysis by Variable Angle Spectroscopic Ellipsometry revealed very uniform films with minor edge effects that originate from the distortion of the flow profile in the vicinity of the wafer edges. However, even including these effects the standard deviation for the thickness considering 21 points along one sample diameter is below 1 nm in all cases.
The refractive indices and extinction coefficients of Alq3 and α-NPD were determined from ellipsometry in the spectral range from 0.8 eV up to 5 eV. These optical constants were derived using a multi-sample analysis approach that employs simultaneous point-by-point fitting of ellipsometric spectra recorded for samples with different thicknesses of the organic layer.