Regensburg 2004 – scientific programme

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.36: Poster

Thursday, March 11, 2004, 18:00–21:00, B

Electrical Properties of a Hybrid Ag / DiMe-PTCDI / GaAs (100) device — •Henry Mendez, Ilja Thurzo, Thorsten Kampen, and Dietrich R.T. Zahn — Institut für Physik, Technische Universität Chemnitz

The perylene derivative dimethyl-3,4,9,10-perylenetetracarboxylic diimide (DiMe-PTCDI) was used for the organic modification of Ag Schottky contacts on n-type GaAs(100) surfaces. The transport electronic properties were investigated recording in situ current-voltage (IV) and capacitance-voltage (CV) characteristics, as well as ex situ characterisation by Deep Level Transient Spectroscopy (DLTS). Additionally, an examination of the unoccupied states of DiMe-PTCDI / GaAs(100) interface was performed by Ultraviolet Photoemission Spectroscopy (UPS).

Modification of the Schottky diodes was obtained by growing an organic DiMe-PTCDI layer on GaAs(100) prior to the preparation of silver dots. Examination of the in situ IV characteristics of the organic modified Schottky contacts shows a decrease in effective barrier height as a function of organic film thickness. This suggests that the transport level band in the organic DiMe-PTCDI layer, lies below the conduction band minimum of GaAs(100). The transport level in the organic layer is further evaluated by DLTS measurements. With UPS an energy level alignment for the GaAs(100) / DiMe-PTCDI / Ag interface is deduced.