Regensburg 2004 – wissenschaftliches Programm

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.37: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

Interface Formation Between Mg and DiMe-PTCDI Studied by Raman Spectroscopy — •Beynor Antonio Paez Sierra, Georgeta Salvan, Reinhard Scholz, Thorsten U. Kampen und Dietrich R. T. Zahn — Institut für Physik, Technische Universität Chemnitz, 09107, Germany

The metal / organic interface plays an important role in the performance of devices with organic active layers. In particular the N,N′-DiMethyl-3,4,9,10-Perylene Tetra Carboxylic DiImide (DiMe-PTCDI) is a promising candidate in organic field effect transistors. Previous studies revealed that the interaction of Ag and In with DiMe-PTCDI is weak [1].

In this work the interface formation between Mg and DiMe-PTCDI films with different thicknesses grown on S-passivated GaAs (100) substrates is investigated in situ by Raman spectroscopy. When Mg is deposited onto a 15 nm DiMePTCDI film the external molecular modes are preserved even up to 15 nm Mg coverage, indicates a low diffusion of Mg into the DiMePTCDI film. Concerning the internal molecular modes, the Mg deposition induces a break down of selection rules reflecting a dynamical charge transfer between the DiMe-PTCDI molecules and the metal. This is in contrast to the Mg / PTCDA interface where strong reaction was observed.

[1] B.A. Paez, G. Salvan, R. Scholz, T. U. Kampen, and D.R.T. Zahn, SPIE USE, V 1 5217-13, (2003).