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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.56: Poster

Donnerstag, 11. März 2004, 18:00–21:00, B

Charge injection into thin fullerene films — •Elizabeth von Hauff, Vladimir Dyakonov, Jürgen Parisi, and Zivayi Chiguvare — Energy and Semiconductor Research Laboratory, Institute of Physics, University of Oldenburg, D-26129, Oldenburg, Germany

In this study, charge injection currents into thin film fullerene diodes composed of a thin film of PCBM sandwiched between a metal and an ITO (indium tin oxide) electrode. Decreasing the thickness of the semiconductor layer in the diodes results in a transition from bulk limited to injection limited currents. From the injection limited currents through the thin film fullerene diodes, parameters describing the energy barrier between metal and semiconductor, the transport level within the bulk, and the activation energy could be calculated according to an already existing hopping model. The model describes charge carriers being injected from the metal into energy sites in the semiconductor medium distributed in a Gaussian density of states. The barrier height experienced by the charge carriers described by the above model was compared to a value calculated earlier from the Fowler-Nordheim model for quantum mechanical tunneling. In an attempt to shed more light on the metal/semiconductor interface, the fullerene diodes were futher investigated via capacitance-voltage measurements.