Regensburg 2004 – scientific programme

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SYOH: Organic and Hybrid Systems for Future Electronics

SYOH 5: Poster

SYOH 5.73: Poster

Thursday, March 11, 2004, 18:00–21:00, B

Dynamic measurements on organic FETs — •I. Hörselmann¹, P. Kornetzky², A. Herasimovich¹, and S. Scheinert¹ — ¹TU Ilmenau — ²IMMS Ilmenau

The application of organic field effect transistors in electronic circuits requires transistors with frequencies up to 100kHz. One possibility to investigate the frequency response of the transistors is the measurement of the transconductance.

For this purpose, we prepared organic FETs using an interdigital pattern for the source/drain contacts to obtain high w/L ratios. The active layer made from polyalkylthionphen (P3AT) was spin coated on top of a silicon wafer with SiO₂ as gate insulator.

The measured static current characteristics of the transistor allow an estimation of the transconductance. At different operating points we measured the frequency response of these quantity. The results show the strong influence of the overlap capacities between the gate and source/drain contacts resulting in a low cut-off frequency. Consequently, a design using an organic insulator is necessary to realize higher cut-off frequencies. Additionally, the accuracy was limited by hysteresis effects already observed during the static measurements.