Regensburg 2004 – scientific programme

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TT: Tiefe Temperaturen

TT 11: Nanoelektronik I: Quantenpunkte, -dr
ähte, -punktkontakte

TT 11.4: Talk

Tuesday, March 9, 2004, 10:15–10:30, H19

Thermopower of metallic single electron devices — •Marko Turek, Jens Siewert, and Klaus Richter — Institut für theoretische Physik, Universität Regensburg, D-93040 Regensburg

While charge transport in single-electron devices has been thoroughly investigated during the past decade, heat transport did not attract much attention, apart from basic considerations, e.g. [1−3]. This is surprising since heat transport exhibits interesting behavior as a function of external gate voltages and, in particular, renders transport regimes accessible which are difficult to study by means of charge transport. Here we present new results for the linear thermopower as a function of the applied gate voltage in single-electron transistors with normal leads and normal-conducting islands, as well as for devices with superconducting islands.
[1] C. W. J. Beenakker and A. A. M. Staring, Phys. Rev. B 46, 9667 (1992)
[2] Y. M. Blanter, C. Bruder, R. Fazio and H. Schoeller, Phys. Rev. B 55, 4069 (1997)
[3] D. Boese and R. Fazio, Europhys. Lett. 56, 576 (2001)