Regensburg 2004 – wissenschaftliches Programm
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TT: Tiefe Temperaturen
TT 27: Nanoelektronik III: Molekulare Elektronik
TT 27.10: Vortrag
Donnerstag, 11. März 2004, 12:15–12:30, H19
Scaling of the Performance of Schottky barrier Carbon Nanotube Transistors — •Stefan Heinze1, Marko Radosavljević2, Jerry Tersoff3, and Phaedon Avouris3 — 1Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany — 2Novel Device Group, Intel Corporation, Hillsboro, OR 97124, USA — 3IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
Today, the performance of carbon nanotube field-effect transistors (CNFETs) is already competitive with that of state-of-the-art silicon transistors [1]. However, a metal-semiconductor junction as in CNFETs fabricated to date necessitates a Schottky type contact which may present a significant barrier for transport. Most CNFETs thus behave as Schottky barrier transistors [2]. This leads to an unexpected scaling of CNFET performance as the device size is reduced [3]. Using an analytic model, we derive explicit scaling laws in the turn-on regime and for the transistor OFF state – in excellent agreement with experimental data [3]. An important consequence of the scaling behavior is an exponential increase of the OFF current with drain voltage for ultra-thin oxide CNFETs which limits the usable drain voltage and thus the achievable ON currents [4].
[1] S. J. Wind et al., Appl. Phys. Lett. 80, 3817 (2002).
[2] S. Heinze et al., Phys. Rev. Lett. 89, 106801 (2002).
[3] S. Heinze et al., cond-mat/0302175 and Phys. Rev. B (in press).
[4] M. Radosavljević et al., Appl. Phys. Lett. 83, 2435 (2003).