Berlin 2005 – wissenschaftliches Programm
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CPP: Chemische Physik und Polymerphysik
CPP 34: Novel materials II
CPP 34.2: Vortrag
Mittwoch, 9. März 2005, 11:30–11:45, TU C230
Prepatterning of substrates via diblock copolymer lithography — •Danilo Zschech1, Dong Ha Kim2, Alexey P. Milenin1, Martin Steinhart1, and Ulrich Gösele1 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany — 2Max Planck Institute of Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
A simple and versatile access to ordered porous materials having lattice constants of a few tens of nanometers and below is based on the use of self-assembled diblock copolymer films as lithographic masks. Thin films of PS-b-PMMA on various substrates consisting of cylindrical domains of the minor phase PMMA normal to the film plane were prepared by spin-casting and annealing under inert atmosphere. After development and removal of the minor phase we enhanced the etch contrast of the major phase consisting of PS by staining with ruthenium tetroxide. We employed reactive ion etching (RIE) to transfer the pattern into the underlying substrates and obtained, for instance, ordered mesoporous silicon. The thus patterned structures may be used as high temperature-resistant lithographic masks for the growth of ordered nanowire arrays.