Berlin 2005 – scientific programme
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DF: Dielektrische Festkörper
DF 4: Poster
DF 4.9: Poster
Saturday, March 5, 2005, 08:30–16:30, Poster TU C
X-ray induced polarisation degeneration in ferroelectric thin films — •A. Solbach1, J.L. Cao1, U. Böttger2, U. Ellerkmann2, P. Gerber2, P.J. Schorn2, R. Waser2 und U. Klemradt1 — 1II. Physikalisches Institut B, RWTH Aachen, Germany — 2Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen, Germany
X-rays are an important tool for sample characterisation and the influence of x-rays is in general negligible. However, in conjunction with ferroelectric thin films and in-situ studies of electrical properties this assumption has to be reconsidered.
The influence of 11 keV x-rays on the electrical properties of ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) thin film capacitors has been studied using synchrotron radiation from HASYLAB bending magnet beamline E2. The 220 nm thick films were deposited by chemical solution deposition on a Pt/TiO2/SiO2/Si substrate. The Pt top electrode was 70 nm thick.
The capacitors (370 µm × 370 µm) have been irradiated at grazing incidence (αi=0.7∘) with various doses up to 1200 kGy at ≈ 54 kGy/h. The x-ray dose does have an influence on the electrical properties, depending on the polarisation state during irradiation. The remanent polarisation and the coercitive voltage are decreased by 40% and the effect of imprint is enhanced. Subsequent continuous switching was able to recover 75% of the remanent polarisation as compared to unirradiated samples.