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DS: Dünne Schichten

DS 10: FV-internes Symposium „Anorganische Dielektrika für die künftige Mikro- und Nanotechnologie"

DS 10.2: Hauptvortrag

Samstag, 5. März 2005, 10:45–11:30, TU HS110

Epitaxial growth of oxide layers on silicon surfaces — •Wolfgang Moritz¹, Nicole Jeutter¹, Laure Libralesso², and Jörg Zegenhagen² — ¹Dept. of Earth and Environmental Sciences, LMU München — ²ESRF, Grenoble, France

In the search for high-k dielectrics to replace the SiO₂ layer in silicon based devices only few materials have been found so far. The oxides have to be thermodynamically stable in contact with Si at temperatures up to 1000^∘ C and the formation of interfacial SiO₂ layers has to be avoided. Among the possible materials are oxides with the perowskite type structure, Ba/SrTiO₃ and rare earth oxides like Pr₂O₃, Y₂O₃ and CeO₂. The current status of the growth of epitaxial oxide layers is reviewed. Most promising is Pr₂O₃ which forms well ordered epitaxial layers on the Si(111) surface and which can be overgrown by Si. Results from X-ray diffraction and LEED show the initial stages of growth and an SiO₂ free interface structure. On the (100) surface the growth of oxide layers in general leads to layers with lower crystalline quality due to rotational domains. These are avoided on the Si(113) surface and first results for growth studies of Pr₂O₃ on this substrate orientation are presented. A further promising field seems to be the growth of layers of ternary oxides which have rarely been studied up to now, except for the perowskite type structures. First results for the growth of aluminosilicates are presented.