Berlin 2005 –
scientific programme
DS 10: FV-internes Symposium „Anorganische Dielektrika für die künftige Mikro- und Nanotechnologie"
Saturday, March 5, 2005, 10:00–13:45, TU HS110
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10:00 |
DS 10.1 |
Invited Talk:
Atomic-scale properties of high-k dielectrics for CMOS: ab initio study for Pr-based materials — •Jarek Dabrowski and Andrzej Fleszar
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10:45 |
DS 10.2 |
Invited Talk:
Epitaxial growth of oxide layers on silicon surfaces — •Wolfgang Moritz, Nicole Jeutter, Laure Libralesso, and Jörg Zegenhagen
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11:30 |
DS 10.3 |
Invited Talk:
The role of interfaces in nanosize ferroelectrics oxides — •Marin Alexe, Lucian Pintilie, and Dietrich Hesse
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12:15 |
DS 10.4 |
Invited Talk:
DRAM capacitor scaling — •M. Gutsche, T Hecht, S Jakschik, C Kapteyn, G Krautheim, S Kudelka, J Lützen, A Sänger, U Schröder, H Seidl, A Avellan, J Heitmann und G Hirt
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13:00 |
DS 10.5 |
Invited Talk:
Advance MOSFET gate dielectrics for high-performance microprocessors: Materials selection and analytical challenges — •E. Zschech, H.-J. Engelmann , K. K Dittmar , S. Ohsiek , B. Tracy, E. Adem , A. Myers, S. Robie , M. Sidorov , and J. Bernard
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