Berlin 2005 – scientific programme

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DS: Dünne Schichten

DS 11: Anorganische dielektrische Schichten

DS 11.1: Talk

Saturday, March 5, 2005, 14:30–14:45, TU HS110

Initial growth of Pr₂O₃ epitaxial layers on silicon substrates — •Laure Libralesso¹, Thomas Schröder², Tien-Lin Lee¹, Isabelle Joumard¹, and Jörg Zegenhagen¹ — ¹ESRF, Grenoble, France — ²IHP, Frankfurt(Oder)

In microelectronics industry, the quality of the thermally and electrically stable Si-SiO₂ interface has made SiO₂ the gate-dielectric material of choice over the last 40 years. However, to follow in time the International Technology Roadmap for Semiconductors, the SiO₂ gate must be replaced by an alternative high-K dielectric layer. Among the proposed materials, thin Pr₂O₃ layers show outstanding dielectric properties. In the present study the Pr₂O₃/Si(111) system has been investigated as a model system.

The initial stages of Pr₂O₃ molecular beam epitaxy growth on Si(111) have been studied with in situ low energy electron diffraction and ultra high vacuum scanning tunneling microscopy (STM). Atomically flat Pr₂O₃ surfaces have been observed for coverages going from submonolayer range up to 2 monolayers. The evolution of the island size, the growth behaviour as well as the nucleation process will be described. Pr₂O₃ deposits have also been investigated on Si(001) substrates. STM as well as surface X-ray diffraction results will be briefly discussed.