Berlin 2005 – scientific programme
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DS: Dünne Schichten
DS 11: Anorganische dielektrische Schichten
DS 11.3: Talk
Saturday, March 5, 2005, 15:00–15:15, TU HS110
Heteroepitaxial silicon / Pr2O3 / silicon structures for nanoelectronics applications — •Thomas Schroeder1,2, Peter Zaumseil1, Christian Wenger1, Gunther Lippert1, Grzegorz Lupina1, Hans Joachim Muessig1, Laure Libralesso2, and Joerg Zegenhagen2 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2ESRF, BP 220, 38043 Grenoble, France
Epitaxial Si/Pr2O3 /Si structures are promising semiconductor-insulator-semiconductor (SIS) stacks for applications as engineered wafer materials (silicon-on-insulator (SOI)) or for innovative transistor designs (multiple gate transistors). Here, we report the molecular beam epitaxy (MBE) growth of such structures on Si(111). The growth of Pr2O3 films on Si(111) was studied by reflection high energy electron diffraction (RHEED) to determine the growth mode. Scanning tunnelling microscopy (STM) visualizes the formation of a closed oxide overlayer. Synchrotron radiation-grazing incidence X-ray diffraction (SR-GIXRD) studies monitored the transition from pseudomorphism to bulk behaviour in the ultra-thin thickness regime (< 10 nm). Thicker oxide layers (up to 50 nm) were studied by XRD and X-ray reflectivity (XRR) to monitor the crystalline quality and surface roughness. The Pr2O3 film grows in the (0001) oriented hexagonal phase on Si(111) but annealing transforms the oxide in its cubic phase with (111) orientation. The Si overgrowth was carried out on hexagonal as well as cubic oxide layers to tailor the strain in the Si epilayer. Pr2O3 /Si multilayer structures are also addressed in brief.