Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 13: Ionenstrahlverfahren II

DS 13.1: Vortrag

Montag, 7. März 2005, 14:15–14:30, TU HS107

Topography of simultaneously sputtered and rotated solid surfaces: A numerical study — •Emmanuel O. Yewande, Reiner Kree, and Alexander K. Hartmann — Institut für Theoretische Physik, Universität Göttingen

Rippled topography that arises from the bombardment of solid surfaces by beams of oblique incidence ions, is undesirable in the dopant profiling of semiconductors since the periodic height modulations lead to a rapid degradation of depth resolution during depth profiling. This problem can be overcome, as demonstrated experimentally [1] and theoretically [2], by Zalar rotation which ensures that the surface remains smooth as it is rotated during erosion. Furthermore, it has been observed [3] that such simultaneously rotated and sputtered surfaces evolve some characteristic lengthscales. By means of a SOS model of ion-beam surface sputtering [4, 5], we performed a numerical investigation of the effects of sample rotation, during ion bombardment, on the surface topography. Our analysis, at different angles of incidence, includes the time evolution of the rms fluctuation in the surface height, and the height-height correlation function. [1] E. -H. Cirlin, J. J. Vajo, R. E. Doty, and T. C. Hasenberg, J. Vac. Sci. Technol. A 9, 1395 (1991). [2] R. M. Bradley, PRE 54, 6149 (1996). [3] F. Frost, A. Schindler, and F. Bigl, PRL. 85, 4116 (2000). [4] A. K. Hartmann, R. Kree, U. Geyer, and M. Kölbel, PRB 65, 193403 (2002). [5] E. O. Yewande, A. K. Hartmann, and R. Kree, cond-mat/0405363.