DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2005 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Dünne Schichten

DS 18: Optische Spektroskopie dünner Schichten I

DS 18.1: Talk

Monday, March 7, 2005, 15:15–15:30, TU HS110

Infrared ellipsometric study of electrochemically grafted organic layers on TiO2 and Si — •Katy Roodenko1, Michael Gensch1, Jörg Rappich2, Ullrich Schade3, Ralf Hunger4, Thomas Dittrich5, Alexandra Merson6, Yoram Shapira6, Norbert Esser1, and Karsten Hinrichs11ISAS - Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin — 2HMI, Abteilung SE1, Kekulestr. 5, 12489 Berlin — 3BESSY, Albert-Einstein Str.15, 12489 Berlin — 4Institute of Material Science, TU Darmstadt, Petersenstr.63, 64287 Darmstadt — 5HMI, Abteilung SE2, Glienicker Str. 100, 14109 Berlin — 6Department of Physical-Electronics, Faculty of Engineering, Tel-Aviv University, 69978 Tel-Aviv, Israel

Infrared spectroscopic ellipsometry (IR-SE) has been applied for the characterization of electrochemically grafted thin nitrobenzene layers on TiO2 and Si. An optical layer model was used for the interpretation of ellipsometric spectra. This allowed a determination of the high frequency refractive index, molecular orientation and the thickness of the grafted films on the TiO2. The earlier derived optical constants for ultra thin nitrobenzene films less than 2nm on Si(001) [1] were used as an input data in these calculations. The results were confirmed by additional methods, such as VIS-ellipsometry and X-ray photoemission spectroscopy (XPS). [1] M. Gensch et al, The use of infrared spectroscopic ellipsometry for studying ultra thin organic layers: nitrobenzene on Si(001), submitted for publication

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2005 > Berlin