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Berlin 2005 – scientific programme

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DS: Dünne Schichten

DS 19: Schichtabscheidung

DS 19.3: Talk

Tuesday, March 8, 2005, 14:45–15:00, TU HS107

Physics of the formation of polycrystalline silicon thin films by aluminum-induced layer exchange — •Jens Schneider, Juliane Klein, Andrey Sarikov, Martin Muske, Stefan Gall und Walther Fuhs — Hahn-Meitner-Institut Berlin, Kekuléstr. 5, 12489 Berlin, Germany

Polycrystalline silicon (poly-Si) thin films on foreign substrates are of great interest for large area electronic devices such as solar cells. Recrystallization of amorphous silicon (a-Si) is one approach to achieve such films. The use of in-expensive substrates like glass limits the process temperature to below the glass softening point at around 650C. Solid phase crystallization (SPC) at these low temperatures is very slow and thus alternatives are searched for. Metals in contact with a-Si have been shown to reduce crystallization times. In metal-induced crystallization (MIC) silicide and non-silicide forming metals are distinguished. The use of Al (non-silicide forming) allows for an aluminum-induced layer exchange (ALILE) process. In ALILE a-Si/Al bi-layers are annealed below the eutectic temperature of Si and Al. The layers exchange position with a concurrent crystallization of silicon.

Here experimental results giving insight into the physics of the layer exchange are presented. The role of the initial a-Si/Al interface as well as the temperature influence is elucidated and their interaction explained. The process is discussed in the phase diagram. Classical nucleation theory is used to interpret the results.

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