Berlin 2005 – scientific programme
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DS: Dünne Schichten
DS 21: FV-internes Symposium „Optische Spektroskopie von dünnen Schichten und Grenzfl
ächen"
DS 21.5: Invited Talk
Tuesday, March 8, 2005, 12:45–13:30, TU HS110
Infrared ellipsometry for structure analysis of organic films — •Karsten Hinrichs1, Michael Gensch1,2, Katy Roodenko1, and Norbert Esser1 — 1ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany — 2Gesellschaft zur Förderung angewandter Optik, Optoelektronik, Quantenelektronik und Spektroskopie e.V., Rudower Chaussee 29, 12489 Berlin, Germany
FT-IR reflectance methods such as infrared spectroscopic ellipsometry (IRSE) provide structural information of thin films by probing the reflectance for radiation differently polarized with respect to the plane of incidence [1-3]. From IRSE not only the real and imaginary part of the dielectric function is derived but also the depolarisation within the sample can be measured. Thereby the high analytical potential is based on (i) a non-contact and non-invasive measurement (ii) monolayer sensitivity (iii) identification of chemical bonds of the film and interface by vibrational absorption bands and (iv) optical modelling with respect to molecular orientations and structure. The high sensitivity and the high chemical information allowed valuable studies of ultra thin films and their interfaces (e.g. Nitrobenzene on Si(001), H/Si(001) and SiO2/Si(001). [1] K. Hinrichs, D. Tsankov, E. H. Korte, A. Röseler, K. Sahre and K.-J. Eichhorn, Appl. Spectrosc. 56 (2002) 737 [2] N. A. Nikonenko, K. Hinrichs, E. H. Korte, J. Pionteck, K.-J. Eichhorn, Macromolecules 37 (2004) 8661 [3] K. Hinrichs, M. Gensch, A. Röseler, N. Esser, J. Phys.: Cond. Matt. 16 (2004) S4335