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DS: Dünne Schichten
DS 22: Optische Spektroskopie dünner Schichten II
DS 22.3: Vortrag
Dienstag, 8. März 2005, 15:00–15:15, TU HS110
Reflectance anisotropy spectroscopy as a versatile tool for the development and control of MOVPE growth processes for devices — •Martin Zorn1, Thomas Zettler2, and Markus Weyers1 — 1Ferdinand-Braun-Institut für Höchtsfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, D-12489 Berlin — 2LayTec GmbH, Helmholtzstr. 13/14, D-10587 Berlin
Reflectance anisotropy spectroscopy (RAS) in combination with reflectance (R) measurements has made the way out of research into production of layer structures for compound semiconductor devices by metal-organic vapour phase (MOVPE). The sensitivity of RAS to surface processes (e.g. oxide desorption and interface formation) as well as bulk properties (e.g. composition and doping concentration) and the possibility to perform measurements in-situ during the semiconductor growth process is the essential advantage in comparison to ex-situ techniques like x-ray diffraction and C/V profiling.
This contribution focuses on the usage of the RAS and R technique for the growth of layer structures for laser diodes. In these structures a high reproducibility of layer parameters like composition, doping profile and emission wavelength is needed to achieve the stringent requirements of the final laser device which increase steadily. Examples will be given for in-situ measurements of e.g. composition, doping profiles and emission wavelength during MOVPE growth in a production-like environment. For the layer structures presented in this work the focus is mainly on the material systems AlGaAs, AlGaInP and GaAsP. Furthermore, the reproducibility of the growth process and the measurement itself is discussed.