Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.15: Poster

Freitag, 4. März 2005, 16:00–18:30, Poster TU B

Growth of thin and atomically flat Fe-films on GaAs(110) — •L. Winking, M. Wenderoth, J. Müller, and R. G. Ulbrich — IV. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen

Room temperature deposition of thin metal films on GaAs(110) generally leads to a 3D cluster growth. In contrast it was shown for thin Cu- and Ag-films on GaAs(110) [1,2] that low temperature deposition and a subsequent annealing to room temperature results in epitaxial films with much larger correlation length of preferred thicknesses. We present an STM study of thin Fe films of different thicknesses ranging from a sub-monolayer coverage up to several monolayers, that were deposited at 80 K on in-situ cleaved GaAs(110). After annealing to room temperature these Fe films were investigated and show clear evidence for a 2D layer-by-layer growth. Our study demonstrates that this system as well follows the scheme of electronic growth as it was already shown for thin Cu- and Ag-films on GaAs(110).

This work was supported by the SFB 602 TP A7.

[1] Z. Zhang, Q. Niu, C.- K. Shih, PRL 80, 5381 (1998) [2] J. Müller, M. Wenderoth, N. Quaas, T. C. G. Reusch, and R. G. Ulbrich, APL 85, 2220 (2004)