Berlin 2005 – scientific programme

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DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.1: Poster

Friday, March 4, 2005, 16:00–18:30, Poster TU B

Properties of mid-frequency reactive sputtered ITO thin films — •Ronny Kleinhempel, Matthias Herrmann, Hartmut Kupfer, and Frank Richter — TU Chemnitz, Inst. f. Physik, 09107 Chemnitz

Indium Tin Oxide (ITO) films show a high transparency in the visible region and they also have a good electrical conductivity. A common but expensive technique to deposit ITO thin films is sputtering from a ceramic target. We used an alternative method to deposit ITO films with a high depostion rate by mid-frequency dual magnetron sputtering (4kW, sine wave) of a metallic target (In/Sn 90/10) in a reactive process (gas mixture Ar/O₂ ). The films were prepared at different O₂ flow rates at constant total pressure (0.4 Pa) in the transition range of the target. Spectral ellipsometry, XRD and four point measurements were applied to analyse the optical properties, the structure and the electrical resistivity. The resistivity decreases from 10⁻² Ω cm to less than 10⁻³ Ω cm by increasing the O₂ flow rate. On the other hand at high O₂ flow rates the transparency starts to decrease. The optical properties are results of a Drude-Lorentzian double oszillator model which describes the absorption in the IR range as well as in the near UV range. Surface roughness and morphology were investigated by AFM and the chemical composition by ERDA and SIMS.