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Berlin 2005 – scientific programme

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DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.34: Poster

Friday, March 4, 2005, 16:00–18:30, Poster TU B

Changes of structure and electrical properties of reactively sputtered WSx-films by increased ion bombardment — •Stefan Seeger1, Rainald Mientus2, and Klaus Ellmer11HMI-Berlin, Glienicker Str. 100, 14109 Berlin — 2OUT e.V., Köpenicker Str. 325b, 12555 Berlin

Polycrystalline WSx-films with a good crystallographic quality ((00l)-texture) were prepared by reactive magnetron sputtering with radio frequency at 27.12 MHz from a tungsten target in a mixture of inert gases (Ar, Xe) and H2S.
Systematic changes of the substrate voltage VS from floating potential VS= +20 V to an applied negative substrate voltage up to VS=-100 V increases the positive ion bombardment, namely Ar+ and Xe+, and leads to a disturbed growth of the WSx films. In situ energy-dispersive X-ray diffraction (EDXRD) technique at a synchrotron radiation source was used to study the growth of the WSx-films.
In this work the influence of the applied substrate voltage, hence an increased ion bombardment on the growing films, is correlated to the crystal structure and the electrical and the optical properties of the sputtered WSx-films.

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