Berlin 2005 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 23: Postersitzung I

DS 23.7: Poster

Freitag, 4. März 2005, 16:00–18:30, Poster TU B

Approach to doping of epitaqxially grown c-BN films - first results — •H. Yin, X.W. Zhang, H.-G. Boyen und P. Ziemann — Abteilung Festkörperphysik, Universität Ulm, D-89069 Ulm

In addition to hard coating applications, cubic boron nitride (c-BN) is also considered as a starting material for high-temperature electronic applications. In order to use c-BN for such a purpose, a high structural quality of the corresponding samples as well as the incorporation of appropriate dopants appears necessary. To approach this goal, heteroepitaxial c-BN films were grown by ion beam assisted deposition (IBAD) on (100) oriented diamond single crystals at high temperatures (∼1000^∘C) and doped by either post-implantation of Sulfur using medium energy ion implantation (50-100keV) or by co-deposition of Silicon during film growth using a multi-layer concept with sufficiently small modulation length to ensure homogeneous doping. Implantation of the Sulfur is found to reduce the mobility of the charge carriers by means of defects which, even after post-heat treatment of the ion-irradiated samples at high temperature, could not be annealed out fully as determined by FTIR. Co-deposition of Silicon during film growth, on the other hand, maintains the quality of the epitaxial film to a large extent suggesting this approach to be superior to post-implantation.